• DocumentCode
    2512524
  • Title

    In-situ measurement and control of growth parameters in molecular beam epitaxy

  • Author

    Sohie, Guy R L ; Maracas, George N.

  • Author_Institution
    GE Corp. Res. & Dev. Center, Schenectady, NY, USA
  • fYear
    1994
  • fDate
    24-26 Aug 1994
  • Firstpage
    539
  • Abstract
    Spectroscopic Ellipsometry (SE) has been adapted to a commercial III-V semiconductor Molecular Beam Epitaxy (MBE) system to monitor and control layer thickness and growth rate, substrate temperature, and ternary alloy composition. Results from a real-time experiment using feedback control based on SE measurements are presented. Algorithms are discussed for tracking of growth rate and temperature, and performance results are shown wing MBE ellipsometry data
  • Keywords
    III-V semiconductors; ellipsometry; feedback; molecular beam epitaxial growth; process control; semiconductor epitaxial layers; semiconductor growth; III-V semiconductor; ellipsometry data; feedback control; growth parameter control; growth rate; layer thickness; molecular beam epitaxy; spectroscopic ellipsometry; substrate temperature; ternary alloy composition; Epitaxial growth; Output feedback; Process control; Semiconductor films; Semiconductor growth;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control Applications, 1994., Proceedings of the Third IEEE Conference on
  • Conference_Location
    Glasgow
  • Print_ISBN
    0-7803-1872-2
  • Type

    conf

  • DOI
    10.1109/CCA.1994.381424
  • Filename
    381424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2512524