Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

Author

Mativenga, Mallory ; Su Hwa Ha ; Di Geng ; Dong Han Kang ; Mruthyunjaya, Ravi K. ; Heiler, Gregory N. ; Tredwell, Timothy John ; Jin Jang

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3199

Lastpage

3205

Abstract

We report a low-voltage-driven amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor-based Corbino (circular) thin-film transistor (TFT) with infinite output resistance beyond pinchoff. The Corbino TFT has inner and outer concentric ring electrodes, and when the latter is the drain, channel width (W) decreases with channel length (L), such that the W/L ratio is not changed after pinchoff. As demonstrated herein, this a-IGZO Corbino TFT is, therefore, a good candidate for uniform current drivers in applications, such as active-matrix organic light-emitting diode display pixels, where it would maintain the same drive (diode) currents, even with variations in supply voltage (V_DD).

Keywords

LED displays; amorphous semiconductors; electrodes; gallium compounds; indium compounds; organic field effect transistors; organic light emitting diodes; thin film transistors; wide band gap semiconductors; zinc compounds; Corbino thin-film transistors; InGaZnO; W/L ratio; active-matrix organic light-emitting diode display pixels; amorphous active layer; channel length; channel width; circular TFT; drain; infinite output resistance; inner concentric ring electrodes; large-area AMOLED displays; low-voltage-driven amorphous indium-gallium-zinc oxide semiconductor; outer concentric ring electrodes; pinchoff; uniform current drivers; Active matrix organic light emitting diodes; Electrodes; Logic gates; Modulation; Resistance; Thin film transistors; Active-matrix organic light-emitting diode (AMOLED); amorphous indium–gallium–zinc oxide (a-IGZO); amorphous indium??gallium??zinc oxide (a-IGZO); channel length modulation; display; infinite output resistance; voltage (IR) drop;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2338306

Filename

6877658