DocumentCode :
2512860
Title :
Life issues, robustness consequences and reliability challenges for Very Deep Sub Micron technologies
Author :
Perdu, Philippe
Author_Institution :
DCT/AQ/LE, CNES, Toulouse, France
fYear :
2010
fDate :
12-16 April 2010
Firstpage :
1014
Lastpage :
1019
Abstract :
Reliability and robustness are strongly linked: aging amplifies robustness issues while environmental stress accelerates aging. As Very Deep Sub Micron (VDSM) technologies offer early wear out and intrinsically lower margins, lifetime and EMC become a coupled challenge that underlines the need of a complete and multidisciplinary approach joining EMC, reliability, device characterization and internal testing skills. Trends, proof of evidence and internal testing approach are described in order to emphasize the need of device aging consideration in robustness studies.
Keywords :
VLSI; electromagnetic compatibility; integrated circuit reliability; EMC; VDSM technology; device aging; device characterization; environmental stress; internal testing skills; very deep sub micron technology; Accelerated aging; Electromagnetic compatibility; Embedded system; Integrated circuit reliability; Internal stresses; Inverters; Power supplies; Power system reliability; Robustness; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-5621-5
Type :
conf
DOI :
10.1109/APEMC.2010.5475630
Filename :
5475630
Link To Document :
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