Title :
Two dimensional transient device simulator with deep trap model for compound semiconductor devices
Author :
Yano, H. ; Kumashiro, S. ; Goto, N. ; Ohno, Y.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
A two-dimensional transient device simulator, BIUNAP-CT, for compound semiconductors is described. The main purpose of this simulator is to clarify deep trap effects on devices, in particular those for semi-insulating substrates. Heterojunction devices can also be treated. The simulator is based on the drift-diffusion model for electron and hole transports and Shockley-Read-Hall (SRH) statistics for deep traps. The finite differential method, Gummel´s scheme, Mock´s scheme, and the full implicit backward Euler method were adopted to solve the device equations. Examples of simulation results on GaAs MESFET side-gating effects in transient action are presented. Various drain current responses to side-gate voltage change were revealed.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; hole traps; semiconductor device models; BIUNAP-CT; GaAs; Gummel´s scheme; MESFET side-gating effects; Mock scheme; Shockley-Read-Hall statistics; compound semiconductor devices; deep trap effects; deep trap model; drain current responses; drift-diffusion model; electron transport; finite differential method; full implicit backward Euler method; hole transports; semi-insulating substrates; side-gate voltage change; transient action; two-dimensional transient device simulator; Charge carrier processes; Differential equations; Electron traps; Gallium arsenide; MESFETs; Poisson equations; Semiconductor devices; Steady-state; Substrates; Transient analysis;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74249
