Title :
Quantum ballistic simulation study of In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET
Author :
Biswas, Sudipta Romen ; Datta, Kanak ; Shadman, Abir ; Rahman, Ehsanur ; Khosru, Quazi D. M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
In this work, quantum ballistic simulation study of a novel III-V In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET is presented. To simulate the device in quantum ballistic regime, nonequilibrium Green´s function formalism has been used. 2D Poisson and Schrodinger equations are solved in self-consistent manner taking into account 2D electrostatics and other quantum mechanical effects. Strong carrier confinement in the In0.7Ga0.3As/InAs/In0.7Ga0.3As quantum well allows the application of efficient mode space approach in quantum ballistic simulation. Simulation results for the QW device with 30 nm gate length are reported. At the same time, effect of gate length variation on the quantum ballistic characteristics is explored.
Keywords :
Green´s function methods; III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; arsenic alloys; electrostatics; gallium alloys; indium alloys; quantum well devices; 2D Poisson equation; 2D electrostatics; III-V quantum well MOSFET; In0.7Ga0.3As-InAs-In0.7Ga0.3As; QW device; Schrodinger equation; carrier confinement; gate length variation; metal-oxide semiconductor field effect transistor; nonequilibrium Greens function formalism; quantum ballistic simulation study; quantum mechanical effect; size 30 nm; Energy barrier; III-V semiconductor materials; Logic gates; MOSFET; Mathematical model; Performance evaluation; Silicon; 2D Electrostatics; Ballistic Transport; Delta Doping; III–V Semiconductors; Quantum Well MOSFET;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4167-4
DOI :
10.1109/ICECE.2014.7026921
