Future trends for TFT integrated circuits on glass substrates

Author

Ohshima, H. ; Morozumi, S.

Author_Institution

Seiko Epson Corp., Nagano, Japan

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

157

Lastpage

160

Abstract

The current status and the future trends of thin-film-transistor (TFT) integrated circuits are discussed following a review of their features. TFT devices have been applied to liquid-crystal displays and linear image sensors, both of which incorporate internally integrated driver circuits. From the viewpoint of TFT advantages, the low-temperature (<600 degrees C) fabrication of TFT circuits is essential to their future progress. The main objective is to realize sufficient electrical characteristics of TFT devices below 600 degrees C, using methods such as MOS interface control, crystalline grain growth, and trap passivation at grain boundaries. This will make it possible to apply TFT circuits not only to much larger substrates but also to concepts such as three-dimensional LSIs.<>

Keywords

CMOS integrated circuits; image sensors; integrated circuit technology; technological forecasting; thin film transistors; 600 degC; CMOS polysilicon TFTs; MOS interface control; TFT integrated circuits; crystalline grain growth; electrical characteristics; glass substrates; grain boundaries; integrated driver circuits; linear image sensors; liquid-crystal displays; three-dimensional LSIs; trap passivation; Crystallization; Driver circuits; Electric variables; Fabrication; Glass; Grain boundaries; Image sensors; Liquid crystal displays; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74250

Filename

74250