Title :
Effect of stone-wales defects and edge roughness on the switching and frequency performance of graphene nanoribbon-FET
Author :
Saha, A.K. ; Saha, Gobinda ; Harun-ur Rashid, A.B.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
The novel electronic properties of graphene nanoribbons (GNRs) including purely two-dimensional structure along with its tunable bandgap have led to intense research into possible applications of this material in nanoscale devices. However, as yet, dimensions of its possibilities in practical device levels have remained inconsistent. In this paper we propose a model for GNR-FET that is made from only Armchair GNRs. Our complete NEGF-based simulation reveals its potential for fast digital electronics with On/Off ratio up to 103, transconductance of 8.5×103 nS/nm which lead to a analog operational frequency up to 3.3THz. The effects of Stone-Wales defects and Edge Roughness in GNRs have been analysed here that shows switching and frequency performance degradation of such GNR-FETs.
Keywords :
Green´s function methods; crystal defects; field effect transistors; graphene devices; microwave transistors; nanoribbons; semiconductor device models; Armchair GNR; C; GNR-FET; NEGF-based simulation; Stone-Wales defects; analog operational frequency; digital electronics; edge roughness; electronic properties; field effect transistors; graphene nanoribbon; nanoscale devices; nonequilibrium Green´s function; tunable bandgap; Cutoff frequency; Field effect transistors; Graphene; Logic gates; Materials; Performance evaluation; Photonic band gap; Armchair GNR; Edge Roughness; GNR-FET; NEGF; Stone-Wales Defects;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4167-4
DOI :
10.1109/ICECE.2014.7026932
