Title :
HBT SiGe technology dedicated to ultra low phase noise applications
Author :
Van Haaren, B. ; Gruhle, A. ; Regis, M. ; Mahner, C. ; Escotte, L. ; Llopis, O. ; Plana, R. ; Graffeuil, J.
Author_Institution :
CNRS, Univ. Paul Sabatier, Toulouse, France
Abstract :
This paper presents a SiGe HBT technology featuring high attractive performances devices both in terms of microwave behavior (fmax higher than 40 GHz) and low-frequency noise (1/f corner noise frequency lower than 300 Hz), through both an appropriate technology and passivation process. SiGe HBTs successfully used for the realization of ultra low phase noise microwave oscillators featuring -135 dBc/Hz at 10 kHz offset
Keywords :
1/f noise; Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave oscillators; passivation; phase noise; semiconductor device noise; semiconductor materials; semiconductor technology; 1/f noise; 40 GHz; SiGe; SiGe HBT technology; low-frequency noise; microwave behavior; microwave oscillators; passivation process; ultra low phase noise applications; Appropriate technology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave technology; Passivation; Phase noise; Silicon germanium;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668621
