• DocumentCode
    2513556
  • Title

    Device Characteristics of Ferroelectric Ceramic KNO3Thin-Film Raw Memories

  • Author

    Scott, J.F. ; Godfrey, R.B. ; Araujo, C.A. ; McMillan, L.D. ; Meadows, H.Brett ; Golabi, Manooch

  • fYear
    1986
  • fDate
    8-11 June 1986
  • Firstpage
    569
  • Lastpage
    571
  • Keywords
    Ceramics; Fatigue; Ferroelectric materials; Logic devices; Material storage; Nonvolatile memory; Thin film devices; Timing; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics. 1986 Sixth IEEE International Symposium on
  • Conference_Location
    Bethlehem, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISAF.1986.201207
  • Filename
    1538147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2513556