Design and development of SiGe HBT based high gain amplifier for GPS application

Author

Soni, Brijesh Kumar ; Ramasubramanian, R. ; Sancheti, Sandeep

Author_Institution

Commun. Syst. Group, ISRO Satellite Centre, Bangalore

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

543

Lastpage

545

Abstract

A two stage high gain small signal amplifier for GPS based receiver application is designed and realised using SiGe heterojunction bipolar transistor (HBT). The measured gain and noise figure is 33.5 dB and 2.9 d B respectively at Vce of 2 V, and total current of 10 mA. The circuit is fabricated on microstrip configuration using RT duroid substrate of dielectric constant 10.5 and height 50 mils. This circuit is being used in satellite based GPS receiver.

Keywords

Ge-Si alloys; Global Positioning System; heterojunction bipolar transistors; microwave amplifiers; microwave bipolar transistors; permittivity; radio receivers; satellite communication; HBT design; RT duroid substrate; SiGe; current 10 mA; dielectric constant; gain 33.5 dB; heterojunction bipolar transistor; high gain microstrip amplifier; microstrip configuration; microwave transistor amplifier; noise figure 2.9 dB; satellite based GPS receiver; voltage 2 V; Circuits; Current measurement; Dielectric measurements; Gain measurement; Germanium silicon alloys; Global Positioning System; Heterojunction bipolar transistors; Noise measurement; Signal design; Silicon germanium; GPS; HBT; Microstrip amplifier; Si BJT; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763218

Filename

4763218