Multilayer CPW lowpass filters on GaAs/Si MMICs

Author

Budimir, Djuradj ; Robertson, Ian D. ; Khalid, A.H. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electron. Syst., Westminster Univ., London, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

315

Lastpage

320

Abstract

A multilayer coplanar waveguide lowpass filter, fabricated on GaAs and Si substrates using MMIC technology, is presented and the performance investigated experimentally and with electromagnetic simulations. The filter is a Chebyshev type employing three low impedance sections and two high impedance sections. The low impedance sections have a characteristic impedance of 3 Ω. The high impedance lines use a narrow centre conductor mounted on top of the polyimide layers in order to achieve as high an impedance as possible (100 Ω)

Keywords

Chebyshev filters; MMIC; coplanar waveguides; electric impedance; gallium arsenide; low-pass filters; microwave filters; passive filters; silicon; waveguide filters; Chebyshev type; GaAs; GaAs MMIC; Si; Si MMIC; coplanar waveguide filter; electromagnetic simulation; high impedance sections; low impedance sections; multilayer CPW lowpass filters; polyimide layers; Chebyshev approximation; Conductors; Coplanar waveguides; Electromagnetic scattering; Electromagnetic waveguides; Filters; Gallium arsenide; Impedance; MMICs; Nonhomogeneous media;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668625

Filename

668625