Design considerations for extremely high-Q integrated inductors and their application in CMOS RF power amplifier

Author

Yeung, Tony ; Lau, Jack ; Ho, H.C. ; Poon, M.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1998

fDate

9-12 Aug 1998

Firstpage

265

Lastpage

268

Abstract

An extremely high-Q monolithic inductor (Q>2000) on silicon substrate was reported by Pehlke, Burstein and Chang (see Proceedings of the IEEE International Electron Device Meeting, pp. 63-6, 1997). The reported Q is 3 order of magnitude higher than a previously reported monolithic inductor. Such high quality factor may greatly improve the performance of monolithic RF circuits. Both 1-port (one terminal at ground) and 2-port (no terminal at ground) scattering parameters of the high-Q inductor were compared to examine any possible differences in device characteristics. A broadband physical model of the active inductor on silicon are presented to illustrate the improvement of quality factor. A design space with a range of gain and phase difference of current in the coils of the active inductor is reported. A typical application of the active inductor in CMOS RF power amplifier design is shown to illustrate the feasibility of applying the active inductor in RF circuits design

Keywords

CMOS analogue integrated circuits; Q-factor; UHF integrated circuits; UHF power amplifiers; circuit simulation; equivalent circuits; inductors; integrated circuit design; lumped parameter networks; 0.8 micron; 1-port scattering parameters; 2-port scattering parameters; 80 percent; 835 MHz; CMOS RF power amplifier; EM simulation tool; Si; active inductor; broadband physical model; device characteristics; gain; high-Q integrated inductors design; lumped equivalent circuit model; monolithic RF circuits; monolithic inductor; phase difference; quality factor; silicon substrate; Active inductors; Circuits; Coils; Electron devices; Power amplifiers; Q factor; Radio frequency; Scattering parameters; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE

Conference_Location

Colorado Springs, CO

Print_ISBN

0-7803-4988-1

Type

conf

DOI

10.1109/RAWCON.1998.709187

Filename

709187