Title :
Design considerations for extremely high-Q integrated inductors and their application in CMOS RF power amplifier
Author :
Yeung, Tony ; Lau, Jack ; Ho, H.C. ; Poon, M.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
An extremely high-Q monolithic inductor (Q>2000) on silicon substrate was reported by Pehlke, Burstein and Chang (see Proceedings of the IEEE International Electron Device Meeting, pp. 63-6, 1997). The reported Q is 3 order of magnitude higher than a previously reported monolithic inductor. Such high quality factor may greatly improve the performance of monolithic RF circuits. Both 1-port (one terminal at ground) and 2-port (no terminal at ground) scattering parameters of the high-Q inductor were compared to examine any possible differences in device characteristics. A broadband physical model of the active inductor on silicon are presented to illustrate the improvement of quality factor. A design space with a range of gain and phase difference of current in the coils of the active inductor is reported. A typical application of the active inductor in CMOS RF power amplifier design is shown to illustrate the feasibility of applying the active inductor in RF circuits design
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF integrated circuits; UHF power amplifiers; circuit simulation; equivalent circuits; inductors; integrated circuit design; lumped parameter networks; 0.8 micron; 1-port scattering parameters; 2-port scattering parameters; 80 percent; 835 MHz; CMOS RF power amplifier; EM simulation tool; Si; active inductor; broadband physical model; device characteristics; gain; high-Q integrated inductors design; lumped equivalent circuit model; monolithic RF circuits; monolithic inductor; phase difference; quality factor; silicon substrate; Active inductors; Circuits; Coils; Electron devices; Power amplifiers; Q factor; Radio frequency; Scattering parameters; Semiconductor device modeling; Silicon;
Conference_Titel :
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location :
Colorado Springs, CO
Print_ISBN :
0-7803-4988-1
DOI :
10.1109/RAWCON.1998.709187
