• DocumentCode
    2514182
  • Title

    An improved algorithm for large-capacity flash memory systems

  • Author

    Xu, Quan ; Lee, Jian-bing

  • Author_Institution
    Inst. of Electron., Chinese Acad. of Sci., Beijing, China
  • fYear
    2010
  • fDate
    28-30 Nov. 2010
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    This paper introduces an improved algorithm to distribute erase operations evenly across the large-capacity flash memory system. Such implementation requires the wear-leveling mechanism to deal with a large proportion of data that is not frequently updated. The original algorithm shows a good performance in lowering memory consumption but can not well satisfy that requirement. Detailed analysis show how the problem occurs, and our work focuses on addressing this problem. Moreover, a FIFO structure is used in this algorithm to improve the efficiency of basic hot-cold data swapping. The simulation results demonstrate that the proposed algorithm provides a much higher performance than the previous scheme, while consuming roughly the same memory space.
  • Keywords
    flash memories; memory architecture; FIFO structure; erase operations; hot-cold data swapping; large-capacity flash memory; memory consumption; wear-leveling mechanism; Algorithm design and analysis; Approximation algorithms; Data structures; Flash memory; Mathematical model; Memory management; Simulation; FIFO; Lifetime; NAND Flash; Storage Systems; Wear Leveling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Computing and Telecommunications (YC-ICT), 2010 IEEE Youth Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-8883-4
  • Type

    conf

  • DOI
    10.1109/YCICT.2010.5713106
  • Filename
    5713106