• DocumentCode
    2514192
  • Title

    InP-based resonant tunneling diode with high peak-to-valley current ratio for THz application

  • Author

    Wang, Wei ; Sun, Hao ; Li, Lingyun ; Sun, Xiaowei

  • Author_Institution
    Key Lab. of Terahertz Solid-State Technol., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An InP-based resonant tunneling diode (RTD) is fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature, with a peak current density 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with a RTD equivalent circuit model.
  • Keywords
    equivalent circuits; microwave diodes; resonant tunnelling diodes; terahertz wave devices; DC measurements; InP-based resonant tunneling diode; PVCR; RTD; THz application; air bridge technology; equivalent circuit model; microwave measurements; peak-to-valley current ratio; Current density; Equivalent circuits; Integrated circuit modeling; Microwave measurements; Resistance; Resonant tunneling devices; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6380445
  • Filename
    6380445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2514192