DocumentCode :
2514200
Title :
Advanced silicon IC interconnect technology: present trends and RF wireless implications
Author :
Gutmann, Ronald J.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
1998
fDate :
9-12 Aug 1998
Firstpage :
285
Lastpage :
288
Abstract :
Back-end-of-the-line (BEOL) trends in silicon ICs include fully planarized interconnect structures with six levels on non-local wiring, copper metallization for improved resistance and electromigration and low dielectric constant (low-k) interlevel dielectrics (ILDs) for reduced line and coupling capacitance. These technological advances, when combined with front-end silicon technology innovations, will impact technology trends in RF wireless ICs and enhance the potential for systems-on-a-chip and application specific ICs (ASICs) with embedded communications capability. Design complexity will be alleviated by use of intellectual property (IP) cores and virtual design environment (VDE) software. Si IC BEOL trends are summarized, synergistic front-end developments discussed, implications for wireless technologies presented, the impacts of a VDE with IP cores discussed, and a timetable for practical realization in wireless products projected
Keywords :
MMIC; chemical mechanical polishing; dielectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; radio equipment; ASICs; BEOL trends; Cu; Cu metallization; IP cores; RF wireless implications; Si; Si IC BEOL trends; VDE software; advanced silicon IC interconnect technology; application specific ICs; back-end-of-the-line trends; coupling capacitance; design complexities; dielectric constant interlevel dielectrics; electromigration; embedded communication; intellectual property cores; line capacitance; nonlocal wiring; planarized interconnect structures; resistance; synergistic front-end developments; systems-on-a-chip; virtual design environment; Capacitance; Copper; Dielectric constant; Electromigration; Metallization; Radio frequency; Radiofrequency integrated circuits; Silicon; Technological innovation; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location :
Colorado Springs, CO
Print_ISBN :
0-7803-4988-1
Type :
conf
DOI :
10.1109/RAWCON.1998.709192
Filename :
709192
Link To Document :
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