• DocumentCode
    2514467
  • Title

    Nonequilibrium transport time of electrons in bulk GaAs under high electrical field at various temperature investigated by terahertz technology

  • Author

    Zhu, Y.M. ; Shen, H.Z. ; Zhuang, S.L.

  • Author_Institution
    Eng. Res. Center of Opt. Instrum. & Syst. Minist. of Educ., Univ. of Shanghai for Sci. & Technol., Shanghai, China
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    By using terahertz technique, the terahertz waveforms emitted from intrinsic bulk GaAs photoexcited by femtosecond laser were recorded. From the temperature dependence of nonequiliburm transport time, τε, we find τε is governed by the polar scattering process of electrons in Γ valley via longitudinal optical phonon emissions.
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; phonons; photoexcitation; terahertz wave spectra; GaAs; femtosecond laser; intrinsic bulk gallium arsenide photoexcitation; longitudinal optical phonon emissions; nonequilibrium transport time; polar scattering process; terahertz technology; terahertz waveforms; Electric fields; Electron optics; Gallium arsenide; Phonons; Scattering; Temperature dependence; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6380458
  • Filename
    6380458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2514467