DocumentCode :
2514467
Title :
Nonequilibrium transport time of electrons in bulk GaAs under high electrical field at various temperature investigated by terahertz technology
Author :
Zhu, Y.M. ; Shen, H.Z. ; Zhuang, S.L.
Author_Institution :
Eng. Res. Center of Opt. Instrum. & Syst. Minist. of Educ., Univ. of Shanghai for Sci. & Technol., Shanghai, China
fYear :
2012
fDate :
23-28 Sept. 2012
Firstpage :
1
Lastpage :
2
Abstract :
By using terahertz technique, the terahertz waveforms emitted from intrinsic bulk GaAs photoexcited by femtosecond laser were recorded. From the temperature dependence of nonequiliburm transport time, τε, we find τε is governed by the polar scattering process of electrons in Γ valley via longitudinal optical phonon emissions.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; phonons; photoexcitation; terahertz wave spectra; GaAs; femtosecond laser; intrinsic bulk gallium arsenide photoexcitation; longitudinal optical phonon emissions; nonequilibrium transport time; polar scattering process; terahertz technology; terahertz waveforms; Electric fields; Electron optics; Gallium arsenide; Phonons; Scattering; Temperature dependence; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
ISSN :
2162-2027
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/IRMMW-THz.2012.6380458
Filename :
6380458
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2514467
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