An efficiency-improved power amplifier using split-ring resonator defected ground structure

Author

Chen, Liang ; Li, Jing ; Pan, Han ; Yi, Xue Qin

Author_Institution

Nat. key Lab. of EMC, China ship Dev. & design Inst., Wuhan, China

fYear

2010

fDate

12-16 April 2010

Firstpage

1421

Lastpage

1423

Abstract

This paper reports the effects of split-ring resonator defected ground structure (SRR DGS) on the output power and efficiency of a class C power amplifier. In order to evaluate the effects of SRR DGS on the efficiency and output power, two class C GaAs FET amplifiers have been measured at 0.86~1.0 GHz. One of them has a SRR DGS microstrip line at the output section, while the other has only 50 Ω straight line. Measured results show that SRR DGS rejects the second harmonic at the output and yields improved output power by 1-5%.

Keywords

defected ground structures; field effect transistors; gallium arsenide; microstrip lines; power amplifiers; resonators; FET amplifier; GaAs; SRR DGS microstrip line; class C power amplifier; efficiency-improved power amplifier; output power; split-ring resonator defected ground structure; Capacitors; Electromagnetic compatibility; Equivalent circuits; Etching; Periodic structures; Photonic band gap; Power amplifiers; Power generation; Power harmonic filters; Power system harmonics; amplifiers; defected ground structure; second harmonic; split-ring resonator;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-5621-5

Type

conf

DOI

10.1109/APEMC.2010.5475719

Filename

5475719