High-performance visible resonant-cavity light-emitting diodes grown by solid source molecular beam epitaxy

Author

Jalonen, M. ; Toivonen, M. ; Köngas, J. ; Salokatve, A. ; Pessa, M.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1997

fDate

24-25 Nov 1997

Firstpage

331

Lastpage

334

Abstract

We report on the visible (660 nm) monolithic resonant-cavity light-emitting diode grown by solid source molecular beam epitaxy. The device consisted of a 1 Å-thick AlGaInP-based optical active region surrounded by AlGaAs-based distributed Bragg reflectors. Current aperture for the emitter was formed by lateral selective wet thermal oxidation. High continuous-wave output power of almost 2 mW with 5-nm linewidth and peak wall-plug efficiency of 3% were attained without heatsinking from the 80-μm device. This device was very resistant against temperature variations

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; optical resonators; oxidation; 2 mW; 3 percent; 660 nm; AlGaAs distributed Bragg reflector; AlGaInP optical active region; AlGaInP-AlGaAs; continuous wave output power; current aperture; lateral selective wet thermal oxidation; linewidth; solid source molecular beam epitaxy; visible monolithic resonant cavity light emitting diode; wall plug efficiency; Apertures; Distributed Bragg reflectors; Light emitting diodes; Molecular beam epitaxial growth; Optical devices; Oxidation; Power generation; Resonance; Solids; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668628

Filename

668628