Title :
High-performance visible resonant-cavity light-emitting diodes grown by solid source molecular beam epitaxy
Author :
Jalonen, M. ; Toivonen, M. ; Köngas, J. ; Salokatve, A. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
We report on the visible (660 nm) monolithic resonant-cavity light-emitting diode grown by solid source molecular beam epitaxy. The device consisted of a 1 Å-thick AlGaInP-based optical active region surrounded by AlGaAs-based distributed Bragg reflectors. Current aperture for the emitter was formed by lateral selective wet thermal oxidation. High continuous-wave output power of almost 2 mW with 5-nm linewidth and peak wall-plug efficiency of 3% were attained without heatsinking from the 80-μm device. This device was very resistant against temperature variations
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; optical resonators; oxidation; 2 mW; 3 percent; 660 nm; AlGaAs distributed Bragg reflector; AlGaInP optical active region; AlGaInP-AlGaAs; continuous wave output power; current aperture; lateral selective wet thermal oxidation; linewidth; solid source molecular beam epitaxy; visible monolithic resonant cavity light emitting diode; wall plug efficiency; Apertures; Distributed Bragg reflectors; Light emitting diodes; Molecular beam epitaxial growth; Optical devices; Oxidation; Power generation; Resonance; Solids; Stimulated emission;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668628
