Design of electron optics system for terahertz extended interaction oscillator

The extended interaction oscillator (EIO) is considered to be a novel type of high power terahertz (THz) source, which has promising application prospects in radar, medical imaging etc. Up to now, CPI and other institutes have developed many types of EIO. Currently the G-band EIO is being developed at the Institute of Electronics, Chinese Academy of Sciences (IECAS). The electric and structural designs for the EIO have been accomplished, in which many technical problems are continued to be resolved. The design of electron optics system for EIO has been finished and the permanent magnetic field is adopted. This paper presents mainly the design of electron optics system for the G-band EIO in detail.