Title :
Triple input single chip diversity LNA
Author_Institution :
Lab. for EM Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
For mobile terminals using antenna diversity, a prototype monolithic integrated triple input low noise amplifier (LNA) with diversity function has been realized. The diversity LNA has more than 10 dB gain and less than 4 dB noise figure from 4 to 5 GHz. For comparison, a single LNA was fabricated on the same wafer showing very similar performance. The chip area is reduced by more than 30% and the power consumption by 50% compared to a multichip LNA with a switch
Keywords :
MESFET integrated circuits; MMIC power amplifiers; diversity reception; land mobile radio; telecommunication terminals; 14 dB; 3.3 V; 3.5 dB; 4 mA; 4 to 5 GHz; C-band; MESFET; SHF; antenna diversity; chip area reduction; gain; low noise amplifier; mobile terminals; monolithic integrated circuit; noise figure; performance; power consumption reduction; triple input single chip diversity LNA; wafer; Circuits; Communication switching; Energy consumption; Foundries; Gain; Low-noise amplifiers; Mobile antennas; Noise figure; Switches; Voltage;
Conference_Titel :
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location :
Colorado Springs, CO
Print_ISBN :
0-7803-4988-1
DOI :
10.1109/RAWCON.1998.709205
