Title :
Modern techniques to design wide band power transfer networks and microwave amplifiers on silicon RF Chips
Author :
Yarman, B. Siddik
Author_Institution :
Dept. of Electr. & Electron. Eng., Istanbul Univ., Istanbul
Abstract :
RF performance of 0.18 mum Si processing technology is investigated via designing a single stage microwave amplifier employing the modern design method called ldquoSimplified Real Frequency Technique (SRFT)rdquo. It is demonstrated 0.18 mum Si processing technology can be utilized to design ultra wideband amplifiers over the frequency band of 11.2 GHz to 22.3 GHz.
Keywords :
MMIC power amplifiers; integrated circuit design; power integrated circuits; silicon; ultra wideband technology; RF performance; Si; class A power amplifier; frequency 11.2 GHz to 22.3 GHz; silicon RF chips; simplified real frequency technique; single stage microwave amplifier; size 0.18 mum; ultra wideband amplifier; wide band power transfer networks; Broadband amplifiers; Design methodology; Microwave amplifiers; Microwave technology; Microwave theory and techniques; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Ultra wideband technology;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763276
