Title :
Thermal analyses by means of scanning probe microscopy [CMOS ICs]
Author :
Balk, L.J. ; Cramer, R.M. ; Fiege, G.B.M.
Author_Institution :
Fachbereich Elektrotech., BUGH Wuppertal, Germany
Abstract :
The continuous decrease of the lateral dimensions of state-of-the-art integrated devices has led to a steady increase of their power densities. As a result, local heating effects are known to cause malfunctions or the destruction of these devices. In order to overcome these problems related with localized heat dissipation, new techniques for thermal analyses with high spatial resolutions have to be developed. This includes temperature as well as thermal conductivity or diffusivity measurements. In this work we discuss the recent progress of scanning probe microscopy based thermal analysis techniques and present concepts for further improvements
Keywords :
CMOS integrated circuits; failure analysis; integrated circuit measurement; integrated circuit reliability; large scale integration; scanning probe microscopy; temperature measurement; thermal analysis; thermal conductivity measurement; thermal diffusivity; CMOS ICs; lateral dimensions; local heating effects; localized heat dissipation; power densities; scanning probe microscopy; spatial resolutions; temperature measurement; thermal analyses; thermal conductivity measurement; thermal diffusivity measurement; Atomic force microscopy; Conductivity measurement; Heating; Optical surface waves; Scanning probe microscopy; Spatial resolution; Surface topography; Temperature; Thermal conductivity; Thermal expansion;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638063
