Title :
Reliability investigation of ultrathin oxides grown by high pressure oxidation and nitrided in N2O for ULSI device applications
Author :
Roh, Tae Moon ; Lee, Dae Woo ; Kim, Jongdae ; Baek, Kyu Ha ; Koo, Jin Gun ; Lee, Duk Dong ; Nam, Kee Soo
Author_Institution :
Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
Abstract :
The reliability of new ultrathin oxides grown by high pressure oxidation (HIPOX) has been evaluated in order to use gate insulators for ULSI MOSFETs. From the results of the TDDB characteristics of 75 Å thick HIPOX oxide nitrided at 1100°C for 30 sec, the lifetime of the nitrided-HIPOX oxide at negative constant current stress, -1.0×10 -6 A/cm2 is about 1.2×109 sec. Initially, the midgap interface trap density (Ditm) of 75 Å thick nitrided-HIPOX oxide is about 2.0×1010 cm -2·eV-1 which is comparable to that of control oxide grown by conventional thermal oxidation. The ΔDitm of the nitrided-HIPOX oxide subjected to the stressing time of 1×104 sec under -0.1 A/cm2 is 1.1×1011 cm-2·eV-1 which is lower than that (1.5×1011 cm-2·eV-1) of the control oxide under the same stressing condition
Keywords :
MOS integrated circuits; MOSFET; ULSI; electric breakdown; integrated circuit reliability; integrated circuit testing; nitridation; oxidation; 1.2E9 s; 1100 degC; 1E4 s; 30 s; 75 angstrom; MOSFETs; N2O; TDDB characteristics; ULSI device applications; gate insulators; high pressure oxidation; midgap interface trap density; negative constant current stress; nitridation; reliability; stressing time; ultrathin oxides; Capacitance-voltage characteristics; Electric variables; Frequency; MOSFETs; Oxidation; Rapid thermal processing; Silicon; Temperature; Thickness control; Ultra large scale integration;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638064
