Deep traps induced by 700keV protons in CdTe and CdZnTe Detectors

Author

Fraboni, Beatrice ; Cavallini, Anna ; Auricchio, Natalia ; Bianconi, Marco

Author_Institution

Dept. of Phys., Bologna Univ.

Volume

6

fYear

2006

fDate

Oct. 29 2006-Nov. 1 2006

Firstpage

3594

Lastpage

3597

Abstract

We have studied the effects of 700 keV proton at increasing fluences (up to times 10¹² p/cm²) on CdTe:Cl and Cd_0.9Zn_0.1Te detectors. The charge transport properties of the detectors have been studied by mutau product measurements, gamma spectroscopy and PICTS analyses. The correlation of the macroscopic transport behaviour with the information on the microscopic defective states allowed for the identification of the role played by the dominant traps: levels Z and HI resulted related to electron trapping effects, while levels K and X showed a hole trapping character.

Keywords

II-VI semiconductors; cadmium compounds; electron traps; hole traps; proton effects; semiconductor counters; 700 keV; Cd_0.9Zn_0.1Te; CdTe detectors; CdTe:Cl; CdZnTe detectors; PICTS analysis; charge transport properties; deep traps; electron trapping; fluences; gamma spectroscopy; hole trapping; macroscopic transport behaviour; microscopic defective states; Charge measurement; Current measurement; Electron microscopy; Electron traps; Gamma ray detection; Gamma ray detectors; Protons; Spectroscopy; Tellurium; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2006. IEEE

Conference_Location

San Diego, CA

ISSN

1095-7863

Print_ISBN

1-4244-0560-2

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2006.353775

Filename

4179817