DocumentCode :
2516122
Title :
SOI for hostile environment applications
Author :
Colinge, J.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fYear :
2004
fDate :
4-7 Oct. 2004
Firstpage :
1
Lastpage :
4
Abstract :
SOI technology has been used for niche applications long before it became mainstream. High-temperature electronics and radiation-hard circuits are probably the two most important of these niche markets. SOI transistors are inherently more resistant to most harsh environments than bulk devices because they contain a smaller volume of silicon. Novel devices such as double-and multiple-gate SOI devices offer the potential of being even more resistant to harsh environment conditions than single-gate devices.
Keywords :
MOSFET; elemental semiconductors; high-temperature electronics; ion beam effects; silicon; silicon-on-insulator; MOSFET; SOI technology; SOI transistors; Si; double gate SOI devices; high temperature electronics; multiple gate SOI devices; niche markets; radiation hard circuits; silicon; single gate devices; Application software; Circuits; Consumer electronics; Ionizing radiation; Leakage current; MOSFETs; Random access memory; Silicon; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
Type :
conf
DOI :
10.1109/SOI.2004.1391530
Filename :
1391530
Link To Document :
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