Title :
Growth of thick films CdTe from the vapor phase
Author :
Greiffenberg, D. ; Sorgenfrei, R. ; Bachem, K.H. ; Fiederle, M.
Author_Institution :
Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ., Freiburg
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
100 mum thick films of CdTe were grown on semi-insulating (100) GaAs substrates by physical vapor transport (PVT) in a modified molecular beam epitaxy facility. The grown layers were highly oriented as revealed from X-ray pole figure measurements. Temperature- and intensity-dependent photoluminescence measurements were taken before and after the chemical removal of the substrate to determine the effect of the GaAs substrate and to estimate the crystallographic quality of the layers. Current-voltage characteristics were performed to obtain the resistivity of the layers with 108 Omegacm.
Keywords :
II-VI semiconductors; cadmium compounds; chemical vapour deposition; electrical resistivity; molecular beam epitaxial growth; photoluminescence; semiconductor counters; substrates; thick films; 100 micron; CdTe; X-ray pole figure measurement; crystallographic quality; current-voltage characteristics; electrical resistivity; molecular beam epitaxy; photoluminescence; physical vapor transport; semi-insulating GaAs substrate; thick film growth; vapor phase deposition; Chemicals; Current-voltage characteristics; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Substrates; Temperature; Thick films; X-ray detectors; X-ray diffraction;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.353791
