300 mm SGOI/strain-Si for high-performance CMOS

In this article, a manufacturable material technology has been developed to produce highly uniform 300 mm SSOI substrates. The focus of this work has been on reducing defects in SGOI and strain Si layers, while maintaining high degree of relaxation/strain in these layers. Furthermore, physics of SGOI formation has been understood to the extent that key physical properties of the final SGOI layer can be accurately predicted based on the knowledge of the initial structure and subsequent processing.