Title :
Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI
Author :
Peterson, R.L. ; Hobart, K.D. ; Yin, H. ; Sturm, J.C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of the features, one should be able to control not only the mobility enhancement, but also maximize the uniaxial strain. Uniaxial tensile strain as large as 1.0% in the (100) direction can be achieved in 10 nm silicon films.
Keywords :
elastic constants; elemental semiconductors; semiconductor thin films; silicon; silicon-on-insulator; stress relaxation; (100) crystal direction; 10 nm; Si; biaxial silicon strain; crystal direction dependence; elastic constants; mobility enhancement; silicon films; strain engineering; strain relaxation; ultrathin SOI structure; uniaxial silicon strain; uniaxial tensile strain; Annealing; Capacitive sensors; Compressive stress; Electron mobility; Germanium silicon alloys; Silicon germanium; Strain measurement; Tensile strain; Tensile stress; Uniaxial strain;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391546
