Title :
Influence of the mechanical strain induced by a metal gate on electron and hole transport in single and double-gate SOI MOSFETs
Author :
Guillaume, T. ; Mouis, M. ; Maîtrejean, S. ; Poncet, A. ; Vinet, M. ; Deleonibus, S.
Author_Institution :
IMPE, CNRS, Grenoble, France
Abstract :
We study the impact of the mechanical strain induced by a TiN metal gate on carrier transport in thin body SOI MOSFETs. The strain induced mobility variation has been calculated as a function of channel orientation and gate length, considering both n-MOS and p-MOS transistors with single or double gate architectures.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; titanium compounds; Si; TiN; carrier transport; channel orientation; double-gate SOI MOSFET; electron transport; gate length; hole transport; mechanical strain; metal gate; n-MOS transistors; p-MOS transistors; single gate SOI MOSFET; strain induced mobility variation; thin body SOI MOSFET; Capacitive sensors; Charge carrier processes; Degradation; Electron mobility; MOSFET circuits; Residual stresses; Silicon; Stress control; Tensile stress; Tin;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391547
