DocumentCode :
2516589
Title :
Electric Field Properties of CdTe Nuclear Detectors
Author :
Cola, A. ; Farella, I. ; Mancini, A.M. ; Donati, A.
Author_Institution :
IMM/CNR, Unit of Lecce
Volume :
6
fYear :
2006
fDate :
Oct. 29 2006-Nov. 1 2006
Firstpage :
3772
Lastpage :
3777
Abstract :
Recently, diode-like In/CdTe/Pt detectors have been realized which look very promising thanks to their enhanced spectroscopic performance. Scope of this work is to investigate the electric field distribution inside these detectors and its temporal evolution by means of the Pockels effect. The implemented set-up allows us to map the electric field and thus to extract the field profiles between the contacts. The analysis shows that the field is mainly confined below the anode. After applying the bias, these detectors are not very stable at room temperature, and they present a pronounced degradation in spectroscopic performance. This degradation is correlated in this work to the evolution of the electric field which has been observed to ´move´ towards the anode. We attribute this ´polarization´ behavior in CdTe detectors to the concomitance of two factors: the presence of deep levels in the bulk material, and the high hole barrier height of In on CdTe.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; electric field effects; gamma-ray detection; semiconductor counters; CdTe nuclear detector; In-CdTe-Pt; Pockels effect; deep levels; diode-like detectors; electric field distribution; electric field evolution; hole barrier height; polarization behavior; spectroscopic performance; Anodes; Birefringence; Crystals; Degradation; Detectors; Diodes; Face detection; Optical polarization; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
ISSN :
1095-7863
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
Type :
conf
DOI :
10.1109/NSSMIC.2006.353814
Filename :
4179856
Link To Document :
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