Title :
Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effects
Author :
Kumar, Anil ; Nagumo, Toshiharu ; Tsutsui, Gen ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
In this article, the expression of effective back gate potential for short channel single gate FD SOI MOSFETs is investigated. The expression of γ is obtained analytically for the first time, and it is shown that γ degrades due to the channel effect in FD SOI MOSFETs. The relationship between S factor and γ in short channel single gate FD SOI MOSFET is also clarified.
Keywords :
MOSFET; S-parameters; elemental semiconductors; semiconductor device models; silicon-on-insulator; S factor; Si; body factor degradation; effective back gate potential; short channel effects; short channel single gate; single gate fully depleted SOI MOSFET; Back; Capacitance; Computer hacking; Degradation; Fluctuations; Immune system; MOSFETs; Medical simulation; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391554
