• DocumentCode
    2516674
  • Title

    Fabrication of high quality patterned SOI materials by optimized low-dose SIMOX

  • Author

    Dong, Yemin ; Chen, Meng ; Chen, Jing ; Wang, Xi

  • Author_Institution
    Shanghai Simgui Technol. Co. Ltd., China
  • fYear
    2004
  • fDate
    4-7 Oct. 2004
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    High quality patterned SOI materials fabricated by optimized low-dose and low-energy SIMOX technique are reported. XTEM results reveal that the formed patterned SOI materials have very flat surface and low defect density transition between the bulk and SOI regions. These excellent quality patterned SOI materials are desirable substrates for system-on-a-chip (SOC) applications.
  • Keywords
    SIMOX; buried layers; dislocation density; elemental semiconductors; system-on-chip; transmission electron microscopy; SOC applications; Si:O2; XTEM analysis; defect density transition; low dose SIMOX method; patterned SOI materials; system-on-chip; Annealing; CMOS technology; Fabrication; Implants; Information technology; Laboratories; Materials science and technology; Performance gain; Silicon; System-on-a-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2004. Proceedings. 2004 IEEE International
  • Print_ISBN
    0-7803-8497-0
  • Type

    conf

  • DOI
    10.1109/SOI.2004.1391555
  • Filename
    1391555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2516674