Title :
Modeling of electronic states and electron-phonon interaction in quantum dots
Author :
Mori, N. ; Ezaki, T. ; Hamaguchi, C.
Author_Institution :
Dept. of Electron. Eng., Osaka Univ., Japan
Abstract :
Electronic states in quantum dots containing N electrons are calculated by numerically diagonalizing the N-electron Hamiltonian in order to study the effect of the dot-shape on the electronic states. Energy relaxation time through longitudinal-acoustic phonon emission is also calculated using the exact eigenstates.
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; electronic structure; gallium arsenide; indium compounds; semiconductor quantum dots; InGaAs-GaAs; N-electron Hamiltonian; dot-shape; electron-phonon interaction; electronic states; energy relaxation time; exact eigenstates; longitudinal-acoustic phonon emission; quantum dots; Charge carrier processes; Cities and towns; Electrons; Phonons; Power engineering and energy; Quantum dots; Quantum mechanics; Stationary state; US Department of Transportation; Wire;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742698
