Title :
Thermal modeling of silicon-on-insulator current mirrors
Author :
Yu, Feixia ; Cheng, Ming-C
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
Abstract :
An analytical approach to thermal modeling of SOI circuits is presented, accounting for heat exchanges among devices and heat loss from the Si film, polylines and interconnects through BOX/FOX to the substrate. The approach was applied to SOI current mirrors to study temperature profiles in devices, polylines and interconnects. Electrothermal simulation was also performed, using the developed model and the thermal circuit in BSIMSOI.
Keywords :
MOSFET; current mirrors; elemental semiconductors; heat transfer; integrated circuit interconnections; semiconductor device models; semiconductor thin films; silicon; silicon-on-insulator; BSIMSOI; MOSFET; SOI circuits; Si; Si film; buried oxide layer; device temperature profile; electrothermal simulation; filled oxide layer; heat exchange; interconnects; polylines; silicon-on-insulator current mirrors; thermal circuit; thermal model; Analytical models; Circuit simulation; Heat engines; Integrated circuit interconnections; Mirrors; Resistance heating; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391565
