Title :
Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technology
Author :
Stefanou, S. ; Hamel, J.S. ; Baine, P. ; Bain, M. ; Armstrong, B.M. ; Gamble, H.S. ; Kraft, M. ; Kemhadjian, H.A.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
The impact of changing the buried oxide thickness and the ground plane resistivity on the substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technology is investigated. It is found that crosstalk increases with increasing oxide thickness for low resistivity ground planes but decreases with increasing oxide thickness for higher ground plane resistivities over certain frequency ranges. An optimum buried oxide thickness is identified.
Keywords :
crosstalk; elemental semiconductors; isolation technology; silicon-on-insulator; Si; buried oxide thickness impact; cross-talk suppression technology; ground plane resistivity; ground plane silicon-on-insulator; Computer science; Conductivity; Equivalent circuits; Frequency measurement; Isolation technology; Probes; Silicon on insulator technology; Testing; Transmitters; Voltage;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391566
