Title :
Germanium-on-insulator (GeOI) structures realized by the Smart Cut™ technology
Author :
Deguet, C. ; Morales, C. ; Dechamp, J. ; Hartmann, J.-M. ; Charvet, A.-M. ; Moriceau, H. ; Chieux, F. ; Beaumont, A. ; Clavelier, L. ; Loup, V. ; Kernevez, N. ; Raskin, G. ; Richtarch, C. ; Allibert, F. ; Letertre, F. ; Mazure, C.
Author_Institution :
DRT, CEA, Grenoble, France
Abstract :
This paper discusses on the development of germanium-on-insulator (GeOI) structures made by using the smart cut technology, in the preparation of the donor wafer and on the Ge epi development. Thin single crystal layers of Ge [001] have been successfully transferred via oxide to oxide bonding or by Ge to oxide bonding, onto 100 mm and 200 mm Si substrates. The surface roughness of the wafers has been measured by AFM. The surface roughness originating from the splitting step is eliminated by a soft polishing step using a CMP.
Keywords :
atomic force microscopy; chemical mechanical polishing; chemical vapour deposition; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; surface cleaning; surface roughness; wafer bonding; 100 mm; 200 mm; AFM; CMP; Ge; Ge [001] surface; Si substrate; Smart Cut technology; atomic force microscopy; chemical mechanical polishing; donor wafer; germanium-on-insulator structures; oxide bonding; polishing; surface roughness; thin single crystal layers; wafer bonding; Bit error rate; CMOS technology; Chemical vapor deposition; Germanium; Microelectronics; Photovoltaic cells; Production; Silicon; Substrates; Wafer bonding;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391571
