Smart Cut™ transfer of 300 mm [110] and (100) Si layers for hybrid orientation technology

Author

Bourdelle, K.K. ; Akatsu, T. ; Sousbie, N. ; Letertre, F. ; Delprat, D. ; Neyret, E. ; Ben Mohamed, N. ; Suciu, G. ; Lagahe-Blanchard, Chrystelle ; Beaumont, A. ; Charvet, A.-M. ; Papon, A.M. ; Kernevez, N. ; Maleville, C. ; Mazure, C.

Author_Institution

Parc Technol. des Fontains, SOITEC, Crolles, France

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

98

Lastpage

99

Abstract

In hybrid-orientation technology (HOT), devices are fabricated on hybrid substrate with [110] and (100) orientations to achieve significant PMOS performance enhancement. Smart cut process is an important step in the substrate engineering for HOT. We investigate the details of layer transfer in the substrates of different orientations and presents the characteristics of product [110] SOI wafers. For the first time, we show that H platelet distributions, splitting kinetics and evolution of post-split surface morphology demonstrate strong substrate orientation dependence. Certain modifications of critical process steps in generic smart cut process flow are required to fabricate high quality [110] SOI wafers.

Keywords

MIS devices; elemental semiconductors; silicon-on-insulator; surface morphology; wafer bonding; H platelet distribution; PMOS; Si; Smart Cut™ Si layer transfer; [110] SOI wafers fabrication; generic smart cut process flow; hybrid orientation technology; hybrid substrate; post-split surface morphology; splitting kinetics; substrate engineering; substrate orientation dependence; Degradation; Kinetic theory; MOS devices; Rough surfaces; Silicon; Substrates; Surface cleaning; Surface morphology; Surface roughness; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391572

Filename

1391572