Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox {SiO}_{2}$ -Based Structure

After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is enhanced as the device undergoes the HTF process. Through the conduction mechanism analyses in the high-resistance state, Schottky emission and Frenkel-Poole emission are fitted. In addition, after HTF treatment, the resistance of conductive filament decreases. The different high-resistance-state characteristics in the two devices can be attributed to more oxygen ions generated by the serious damage during HTF. Finally, the switching behavior activated by low-temperature forming process is employed to confirm the model.