Title :
An advanced BiCMOS process utilizing ultra-thin silicon epitaxy over arsenic buried layers
Author :
El-Diwany, M. ; Borland, J. ; Chen, J. ; Hu, S. ; van Wijnen, P. ; Vorst, C. ; Akylas, V. ; Brassington, M. ; Razouk, R.
Author_Institution :
Philips Res. Lab., Sunnyvale, CA, USA
Abstract :
A description is given of SABRe (Submicron Advanced BiCMOS Research), a 0.8- mu m CMOS-based BiCMOS process that utilizes ultrathin (0.8- mu m) undoped epitaxial layers grown on n/sup +/ (arsenic) and p/sup +/ (boron) buried layers. The use of this undoped epitaxial layers enables the independent tailoring of the substrate doping profiles in the MOS and bipolar regions through surface implants alone. Surface channel NMOS and PMOS transistors using n/sup +/ and p/sup +/ doped polysilicon gates with 0.5 mu m effective channel length were achieved along with npn transistors with 11.5-GHz cutoff frequency. The process also features self-aligned cobalt silicide for the gate/emitter and source-drain.<>
Keywords :
BIMOS integrated circuits; cobalt compounds; doping profiles; integrated circuit technology; ion implantation; semiconductor technology; 0.5 micron; 0.8 micron; 11.5 GHz; BiCMOS process; SABRe; Si:As buried layers; Si:B buried layers; Submicron Advanced BiCMOS Research; independent tailoring; npn transistors; polysilicon gates; salicides; scaling; self aligned CoSi/sub 2/; silicides; submicron; substrate doping profiles; surface implants alone; ultra thin epitaxial layers; BiCMOS integrated circuits; Boron; Doping profiles; Epitaxial growth; Epitaxial layers; Implants; MOS devices; MOSFETs; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74271