DocumentCode :
2517074
Title :
Microscopic gain modeling of semiconductor lasers considering higher-order many-body effects
Author :
Tsuchiya, H. ; Komaki, K. ; Miyoshi, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
fYear :
1998
fDate :
19-21 Oct. 1998
Firstpage :
73
Lastpage :
76
Abstract :
The authors present a microscopic derivation of the spectral broadening function in semiconductor lasers based upon the nonequilibrium Green´s function technique. In this approach, various scattering phenomena such as electron-electron, electron-phonon, and electron-impurity interactions are incorporated in terms of self-energy functions.
Keywords :
Green´s function methods; electron-phonon interactions; impurity scattering; laser theory; many-body problems; semiconductor device models; semiconductor lasers; spectral line broadening; electron-electron interactions; electron-impurity interactions; electron-phonon interactions; higher-order many-body effects; microscopic derivation; microscopic gain modeling; nonequilibrium Green function technique; scattering; self-energy functions; semiconductor lasers; spectral broadening function; Equations; Laser modes; Light scattering; Microscopy; Optical scattering; Particle scattering; Phonons; Plasmons; Semiconductor lasers; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
Type :
conf
DOI :
10.1109/IWCE.1998.742712
Filename :
742712
Link To Document :
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