Title :
A master equation approach to the simulation of electron transport in small semiconductor devices
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The purpose of this paper is to sketch a ´formal´ derivation of the transport equation, emphasizing the crucial approximations required, and to extend the method to more realistic band structures. The example of electron transport in an nin diode is presented.
Keywords :
band structure; electrical conductivity; master equation; semiconductor device models; semiconductor diodes; electron transport; master equation; nin diode; realistic band structures; simulation; small semiconductor devices; transport equation; Eigenvalues and eigenfunctions; Electron mobility; Equations; Matrix decomposition; Phonons; Reservoirs; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
DOI :
10.1109/IWCE.1998.742715
