DocumentCode
2517174
Title
Iterative local Monte Carlo technique for the simulation of Si-MOSFETs
Author
Jakumeit, J. ; Sontowski, T. ; Ravaioli, U.
Author_Institution
II. Phys. Inst., Koln Univ., Germany
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
92
Lastpage
95
Abstract
The authors have formulated the mutation operator Monte Carlo method (MOMC) and tested this approach both in the context of evolutionary algorithm optimization and as a stand done transport simulator. They investigate the features of this transport operator in detail, showing that the MOMC is a local Monte Carlo technique which combines features and advantages of the Monte Carlo approach with the stability of iterative algorithms.
Keywords
MOSFET; Monte Carlo methods; elemental semiconductors; iterative methods; semiconductor device models; silicon; Si; Si-MOSFETs; iterative algorithms; iterative local Monte Carlo technique; mutation operator Monte Carlo method; simulation; stand done transport simulator; transport operator; Computational modeling; Current measurement; Electrons; Evolutionary computation; Genetic mutations; Iterative algorithms; Kinetic theory; Monte Carlo methods; Particle scattering; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742718
Filename
742718
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