• DocumentCode
    2517195
  • Title

    Efficient hole transport model in warped bands for use in the simulation of Si/SiGe MOSFETs

  • Author

    Watling, J.R. ; Asenov, A. ; Barker, J.R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • fYear
    1998
  • fDate
    19-21 Oct. 1998
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    An analytical geometric model for the valence band in strained and relaxed Si/sub 1-x/Ge/sub x/ is presented, which shows good agreement with a 6-band k/spl middot/p analysis of the valence band. The geometric model allows us to define an effective mass tensor for the warped valence band structure. The model also has applications in the study of III-V semiconductors, and could aid in the interpretation of cyclotron resonance experiments in these bands. A warped three-band Monte Carlo simulation has been developed based on this model making use of the efficient calculation of trajectory dynamics that is made possible through the use of such a model. The calculated transport characteristics show good agreement with the available experimental data.
  • Keywords
    Ge-Si alloys; MOSFET; Monte Carlo methods; effective mass; electrical conductivity; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; valence bands; III-V semiconductors; Si-GeSi; Si/SiGe MOSFETs; analytical geometric model; cyclotron resonance; effective mass tensor; efficient hole transport model; relaxed Si/sub 1-x/Ge/sub x/; simulation; strained Si/sub 1-x/Ge/sub x/; trajectory dynamics; valence band; warped bands; warped three-band Monte Carlo simulation; warped valence band structure; Analytical models; Computational modeling; Computer simulation; Effective mass; Electronic mail; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Silicon germanium; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    0-7803-4369-7
  • Type

    conf

  • DOI
    10.1109/IWCE.1998.742719
  • Filename
    742719