DocumentCode
2517214
Title
Hierarchy of simulation approaches for hot carrier transport in deep sub-micron devices
Author
Ravaioli, U.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1998
fDate
19-21 Oct. 1998
Firstpage
100
Lastpage
103
Abstract
The purpose of this brief review is to survey the hierarchy of physical approaches for semiconductor transport and device simulation, giving an indication of the limits of applicability and approximations underlying the various approaches. The main focus is on the relevance of the approaches for the simulation of hot carrier effects in deeply scaled devices.
Keywords
hot carriers; reviews; semiconductor device models; deep sub-micron devices; deeply scaled devices; device simulation; hierarchy; hot carrier effects; hot carrier transport; review; semiconductor transport; simulation approaches; Boltzmann equation; Computational modeling; Coupling circuits; Hot carriers; Integral equations; Integrodifferential equations; Partial differential equations; Particle scattering; Poisson equations; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location
Osaka, Japan
Print_ISBN
0-7803-4369-7
Type
conf
DOI
10.1109/IWCE.1998.742720
Filename
742720
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