Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure

Author

Jungemann, C. ; Bartels, M. ; Keith, S. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotech. und Mikroelektronik, Bremen Univ., Germany

fYear

1998

fDate

19-21 Oct. 1998

Firstpage

104

Lastpage

107

Abstract

Methods are presented, which allow the efficient calculation of equilibrium and near-equilibrium transport properties in conjunction with an full band structure evaluated by a nonlocal empirical pseudopotential method. These methods are not only applied to the case of transport parameter calibration, but are also used for the extraction of transport coefficients for hydrodynamic models.

Keywords

Ge-Si alloys; Hall effect; band structure; electrical conductivity; elemental semiconductors; pseudopotential methods; semiconductor materials; silicon; Hall factor; Si; SiGe; electrons; equilibrium transport properties; full-band structure; holes; hydrodynamic models; near-equilibrium transport properties; nonlocal empirical pseudopotential method; transport coefficient evaluation; transport parameter calibration; Calibration; Charge carrier processes; Germanium silicon alloys; Hydrodynamics; Interpolation; Mesh generation; Monte Carlo methods; Silicon germanium; Temperature; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on

Conference_Location

Osaka, Japan

Print_ISBN

0-7803-4369-7

Type

conf

DOI

10.1109/IWCE.1998.742721

Filename

742721