DocumentCode :
2517327
Title :
Terahertz response of MSM photodiodes: Monte Carlo simulation
Author :
Ryzhii, M. ; Ryzhii, V. ; Khmyrova, I. ; Willander, M.
Author_Institution :
Comput. Solid State Phys. Lab., Aizu Univ., Japan
fYear :
1998
fDate :
19-21 Oct. 1998
Firstpage :
124
Lastpage :
126
Abstract :
The ultra-high-frequency response of interdigitated metal-semiconductor-metal photodiodes with a GaAs absorbing layer is studied using an ensemble Monte Carlo particle method.
Keywords :
Monte Carlo methods; gallium arsenide; metal-semiconductor-metal structures; photodiodes; semiconductor device models; GaAs; GaAs absorbing layer; Monte Carlo simulation; contact spacing; interdigitated MSM photodiodes; ultra-high-frequency response; velocity overshoot; Charge carrier processes; Frequency response; Gallium arsenide; Laboratories; Monte Carlo methods; Optical scattering; Photodiodes; Physics computing; Schottky barriers; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on
Conference_Location :
Osaka, Japan
Print_ISBN :
0-7803-4369-7
Type :
conf
DOI :
10.1109/IWCE.1998.742726
Filename :
742726
Link To Document :
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