Title :
Unusual floating body effect in fully depleted MOSFETs
Author :
Bawedin, M. ; Cristoloveanu, S. ; Flandre, D.
Author_Institution :
IMEP, ENSERG, Grenoble, France
Abstract :
The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprising behavior, observed for low as well as high drain voltage, exhibits hysteresis, time dependence, and other intriguing properties. The experimental conditions are systematically investigated and a preliminary model is proposed. The new effect is a combination of several mechanisms: floating body, back-gate biasing, transient drain and gate currents, and poly-depletion.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; Si; back gate biasing; drain voltage; floating body effect; fully depleted SOI MOSFET; hysteresis; intriguing properties; polydepletion; time dependence; transconductance; transient drain currents; transient gate currents; Computer hacking; Hysteresis; Immune system; Impact ionization; MOSFETs; Microelectronics; Shape; Time measurement; Transconductance; Voltage;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391595
