Title :
New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices
Author :
Gallon, C. ; Fenouillet-Beranger, C. ; Meziani, Y.M. ; Cesso, J.P. ; Lusakowski, J. ; Teppe, F. ; Dyakonova, N. ; Vandooren, A. ; Knap, W. ; Ghibaudo, G. ; Delille, D. ; Cristoloveanu, S. ; Skotnicki, T.
Author_Institution :
ST Microelectron., Crolles, France
Abstract :
We propose to compare the main classical methods used for mobility parameters extraction (static method or split C-V) with a new approach based on magnetoresistance (MR) measurements. We focus on short channel devices behavior and compare it with long channel transistor behavior. This exhaustive study indicates that the magnetoresistance method is well adapted for thin film mobility extraction for fully-depleted SOI devices as thin as 10 nm.
Keywords :
MOSFET; capacitance; carrier mobility; elemental semiconductors; magnetoresistance; silicon-on-insulator; thin film transistors; 10 nm; Si; fully depleted SOI devices; long channel transistor; magnetoresistance measurement; short channel devices; silicon-on-insulator; split capacitance-voltage measurement; static method; thin film mobility parameters extraction; Capacitance-voltage characteristics; Degradation; Dielectric thin films; MOS devices; MOSFET circuits; Magnetoresistance; Power MOSFET; Semiconductor films; Silicon on insulator technology; Thin film transistors;
Conference_Titel :
SOI Conference, 2004. Proceedings. 2004 IEEE International
Print_ISBN :
0-7803-8497-0
DOI :
10.1109/SOI.2004.1391596
