New magnetoresistance method for mobility extraction in scaled fully-depleted SOI devices

Author

Gallon, C. ; Fenouillet-Beranger, C. ; Meziani, Y.M. ; Cesso, J.P. ; Lusakowski, J. ; Teppe, F. ; Dyakonova, N. ; Vandooren, A. ; Knap, W. ; Ghibaudo, G. ; Delille, D. ; Cristoloveanu, S. ; Skotnicki, T.

Author_Institution

ST Microelectron., Crolles, France

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

153

Lastpage

155

Abstract

We propose to compare the main classical methods used for mobility parameters extraction (static method or split C-V) with a new approach based on magnetoresistance (MR) measurements. We focus on short channel devices behavior and compare it with long channel transistor behavior. This exhaustive study indicates that the magnetoresistance method is well adapted for thin film mobility extraction for fully-depleted SOI devices as thin as 10 nm.

Keywords

MOSFET; capacitance; carrier mobility; elemental semiconductors; magnetoresistance; silicon-on-insulator; thin film transistors; 10 nm; Si; fully depleted SOI devices; long channel transistor; magnetoresistance measurement; short channel devices; silicon-on-insulator; split capacitance-voltage measurement; static method; thin film mobility parameters extraction; Capacitance-voltage characteristics; Degradation; Dielectric thin films; MOS devices; MOSFET circuits; Magnetoresistance; Power MOSFET; Semiconductor films; Silicon on insulator technology; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391596

Filename

1391596