Title :
Matte Tin (Sn) Plating of Semiconductor Devices - Update of Whisker Growth Study
Author :
Sriyarunya, Anocha ; Tondtan, Jiraporn ; Tukiman, Hasmani
Author_Institution :
Spansion Thailand Ltd., Nonthaburi, Thailand
Abstract :
Now that the semiconductor industry has essentially completed transition to lead free ("Pb-free") processing, and having met the July 1, 2006 deadline (with the exception of a few market segments; namely Automotive, Medical, Mil-Aero, and a few others), many new Pb-free processes are undergoing continuous improvement and optimization through on-going individual and collaborative initiatives (iNEMI, IPC/JEDEC, AEC, etc.). Several Pb-free terminals finished have been proposed and evaluated. Some of them were rejected as soon as evaluation began. Others have been dropped along the way due to various reasons. However, a few alternatives are becoming increasing popular and seem to be the "chosen ones". Electroplating tin can be considered as a drop-in replacement for SnPb plating. The most important concern with the use of 100% matte Sn plating is its susceptibility to whisker, which has proven to be a reliability concern in the past. Numerous individuals and consortiums have conducted a lot of research, in the recent past, to understand the whisker growth mechanism. In an effort to improve the reliability of Pb-free components in automotive applications, and the purpose of this presentation is to do just that in a specific area of current interest .
Keywords :
electroplating; reliability; tin; whiskers (crystal); Cu; Sn; copper substrate; electroplating; matte tin plating; reliability; semiconductor devices; whisker growth; Additives; Annealing; Assembly; Compressive stress; Copper; Lead; Semiconductor devices; Temperature; Testing; Tin;
Conference_Titel :
Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2117-6
Electronic_ISBN :
978-1-4244-2118-3
DOI :
10.1109/EPTC.2008.4763417