Simulation and design of a single charge detector

Author

Iannaccone, G. ; Ungarelli, C. ; Macucci, M.

Author_Institution

Dipt. di Ingegneria dell´´Inf., Pisa Univ., Italy

fYear

1998

fDate

19-21 Oct. 1998

Firstpage

145

Lastpage

148

Abstract

We have performed a numerical simulation of a system made of a quantum dot and a nearby quantum point contact defined, by means of depleting metal gates, in a two-dimensional electron gas at a GaAs/AlGaAs heterointerface. As recent experiments have shown, such a system can be used as a non-invasive detector of single charges being added to or removed from a quantum dot. We have computed the occupancy of the dot and the resistance of the quantum wire as a function of the voltage applied to the plunger gate, and have derived design criteria for achieving optimal sensitivity.

Keywords

III-V semiconductors; aluminium compounds; charge measurement; gallium arsenide; quantum interference devices; quantum point contacts; semiconductor device models; semiconductor quantum dots; two-dimensional electron gas; GaAs-AlGaAs; depleting metal gates; design criteria; heterointerface; numerical simulation; quantum dot; quantum point contact; quantum wire; sensitivity; single charge detector; two-dimensional electron gas; Contact resistance; Detectors; Electrons; Electrostatics; Gallium arsenide; Poisson equations; Quantum computing; Quantum dots; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 1998. IWCE-6. Extended Abstracts of 1998 Sixth International Workshop on

Conference_Location

Osaka, Japan

Print_ISBN

0-7803-4369-7

Type

conf

DOI

10.1109/IWCE.1998.742732

Filename

742732